Toshiba TPCA8A10-H 2.9m N-Channel MOSFET DFN5x6
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
- High-Efficiency DC-DC Converters
- Notebook PCs
- Mobile Equipment
- Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
- High-speed switching
- Small gate charge: QSW = 12 nC (typ.)
- Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V)
- Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
AON6414A N6414A 6414A 6414 N-Channel MOSFET
Brand new 30V N-Channel MOSFET Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in...
Descriptions: The SiC631 is integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm...
AO4407 4407 SOP-8 MOSFET
The AO4407/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch...