SI4532DY 4532 Dual MOSFET SOP-8
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
- N-Channel 3.9A, 30V.RDS(ON) = 0.065Ω @VGS = 10V RDS(ON) = 0.095Ω @VGS = 4.5V
- P-Channel -3.5A,-30V.RDS(ON)= 0.085Ω @VGS = -10V RDS(ON)= 0.190 Ω @VGS = -4.5V.
AON6414A N6414A 6414A 6414 N-Channel MOSFET
Brand new 30V N-Channel MOSFET Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in...
Descriptions: The SiC631 is integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm...
AO4407 4407 SOP-8 MOSFET
The AO4407/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch...