SI4532DY 4532 Dual MOSFET SOP-8
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
- N-Channel 3.9A, 30V.RDS(ON) = 0.065Ω @VGS = 10V RDS(ON) = 0.095Ω @VGS = 4.5V
- P-Channel -3.5A,-30V.RDS(ON)= 0.085Ω @VGS = -10V RDS(ON)= 0.190 Ω @VGS = -4.5V.
AON6414A N6414A 6414A 6414 N-Channel MOSFET DFN5x6
Brand new 30V N-Channel MOSFET Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in...
AO4413 4413 SOP-8 P-Channel MOSFET
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch...
P0603BD 0603B 0603 TO-252
Brand new N-Channel Enhancement Mode P0603BD TO252 Specifications: VDSS - 30V RDSON - 5.8mΩ @VGS = 10V Id = 70A Datasheet: https://bit.ly/2PKqiIx