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COD PAYMENTS ON ALL ON-STOCK CHIPS!

FDS6675BZ 6675B 6675 P-Channel PowerTrench MOSFET

This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance. This device is works well for Power Management and loads switching applications common in Notebook Computers and Portable Battery Packs.

Specification:

  • Max rDS(on)=13milliohms at VGS = -10V, ID= -11A
  • Max rDS(on)=21.8milliohms at VGS = -4.5V, ID= -9A
  • Extended VGS range (-25V) for battery applications
  • HBM ESD protection level of 5.4 KV typical 
  • High-performance trench technology for extremely low RDS(on)
  • High power and current handing capability

Datasheet:

https://bit.ly/2TdTo1E




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