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FDMS3600S 3600S 3600 Asymmetric Dual N-Channel MOSFET

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Specifications:

  • Q1: N-Channel
  • Max rDS(on) = 5.6 mΩat VGS= 10 V, ID = 15 A
  • Max rDS(on) = 8.1 mΩat VGS= 4.5 V, ID = 14 A
  • Q2: N-Channel
  • Max rDS(on) = 1.6 mΩat VGS= 10 V, ID= 30 A
  • Max rDS(on)= 2.4 mΩat VGS= 4.5 V, ID= 25 A
  • Low inductance packaging shortens 
  • rise/fall times, resulting in 
  • lower switching losses
  • MOSFET integration enables optimum layout for lower circuit 
  • inductance and reduced switch node ringing
  • RoHS Compliant

Datasheet:

https://bit.ly/2Prrql6

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