DMN66 DMN66D0LDW SOT363
Brand new DMN66D0LDW SO363
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Small Surface Mount Package
- ESD Protected Gate, 1KV (HBM)
AON6414A N6414A 6414A 6414 N-Channel MOSFET
Brand new 30V N-Channel MOSFET Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in...
AO4413 4413 SOP-8 P-Channel MOSFET
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch...
P0603BD 0603B 0603 TO-252
Brand new N-Channel Enhancement Mode P0603BD TO252 Specifications: VDSS - 30V RDSON - 5.8mΩ @VGS = 10V Id = 70A Datasheet: https://bit.ly/2PKqiIx