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Toshiba TPCA8A10-H 2.9m N-Channel MOSFET DFN5x6

MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

 Applications

  • High-Efficiency DC-DC Converters
  • Notebook PCs
  • Mobile Equipment

 Features

  • Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
  • High-speed switching
  • Small gate charge: QSW = 12 nC (typ.)
  • Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V)
  • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
  • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

 

TPCA




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