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FDS6675BZ 6675B 6675 P-Channel PowerTrench MOSFET
FDS6675BZ 6675B 6675 P-Channel PowerTrench MOSFET
₱300.00
This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance. This device is works well for Power Management and loads switching applications common in Notebook Computers and Portable Battery Packs.
Specification:
Max rDS(on)=13milliohms at VGS = -10V, ID= -11A
Max rDS(on)=21.8milliohms at VGS = -4.5V, ID= -9A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 5.4 KV typical
High-performance trench technology for extremely low RDS(on)
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